爱普生发布5G室外基站控制器温补晶振X1G006061009514

爱普生发布5G室外基站控制器温补晶振X1G006061009514，爱普生通过应用其多年来开发的高效、紧凑和精密技术来解决挑战，寻求推进工业前沿并推动循环经济。这些技术可以节省能源、实现更小的产品并提高准确性和精度，使爱普生有源晶振能够为可持续发展目标 (SDG) 做出贡献，从而为所有人带来更美好、更可持续的未来。
爱普生公司推出了TG-5510CB晶振，温补晶振编码X1G006061009514，频率20.000000兆赫，输出WaveCMOS，电源电压3.13 ~ 3.46 V，电源电压(一般)3.300 V，尺寸(LxWxH)5.0 x 3.2 x 1.5 mm，操作温度-40至+85°C，频率公差+/- 1.0 ppm，说明- TG-5510CB是一种高稳定性TCXO可与任何一种CMOS或裁剪正弦输出，5G基站和边缘计算可调至+85℃，需要户外安装，小型化和无风扇操作，与其他tcxo相比，它提供了各种改进，如由于低温的坡度和相位噪声，符合GR-1244-CORE Stratum3和G.8262.1, G.8273.2 (A类，B类)，注意:本产品没有电压控制(Vc)功能，应用程序：网络设备，5G室外基站控制器，微波，同步遵从性标准，Stratum3，SyncE，IEEE1588，具备良好的耐压性能以及可靠性能。

爱普生晶振原厂编码	Model	Frequency	LxWxH	Output Wave	Supply Voltage	F.Tol@25°C	Ope Temperature
X1G006021000314	TG5032CKN	50.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061004514	TG-5510CB	25.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +105 °C
X1G006061004814	TG-5510CB	50.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +105 °C
X1G006061007614	TG-5510CB	30.720000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061008214	TG-5510CB	38.400000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009014	TG-5510CB	25.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009214	TG-5510CB	25.600000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009414	TG-5510CB	12.800000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009514	TG-5510CB	20.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009714	TG-5510CB	50.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009814	TG-5510CB	10.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G005241000200	TG5032SGN	19.200000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000300	TG5032SGN	25.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000400	TG5032SGN	40.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000700	TG5032SGN	10.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000800	TG5032SGN	26.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000900	TG5032SGN	19.200000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001000	TG5032SGN	19.200000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	2.700 to 3.000 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001200	TG5032SGN	19.200000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	2.700 to 3.000 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001300	TG5032SGN	40.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C